Go to previous product

Go to next product

Name of product

IR-OBIRCH analysis system

Click image to enlarge

Close  Datasheet:  1543 KB

Key Specifications

Part Number µAMOS 200 Name of product IR-OBIRCH analysis system Brief description Semiconductor failure analysis system using IR-OBIRCH Full description Hamamatsu's µAMOS 200 is a semiconductor failure analysis system which uses IR-OBIRCH (InfraRed - Optical Beam Induced Resistance CHange ) method for localization of leakage current path and to observe the abnormal resistance part of contacts in LSI devices. Features High spatial resolution image Backside observation (λ=1.3 μm) Observation of high doped substrate (Epi-sub.) Using an infrared laser (wavelength 1.3 μm) means no OBIC signal is produced in the semiconductor field, which enables the OBIRCH signal caused by defect to be detected. Under macro lens, failure locations in a DUT (Device Under Test) with chip size of up to 15 mm x 15 mm Applications Localization of leakage current path IDDQ failure analysis Detection of metal defect Inspection of defect in the metal line (void, SI nodule) Inspection of abnormal resistance part at contact hole (via contact) Metallization process monitoring Technical Note(s) IR-OBIRCH AMP (C7636-04)