
InGaAs PIN photodiodes are near infrared (NIR) detectors that, due to a small terminal capacitance, feature low noise, low dark current and high-speed response. When cooled with a thermoelectric cooler, InGaAs PIN photodiodes exhibit very low dark current and deliver higher
D* (Detectivity). InGaAs detectors are used for NIR spectroscopy, optical communication and can be categorized into four types:
Hamamatsu Photonics manufactures a wide variety of light emitter / receiver devices for short (850nm) or long (1310 nm and 1550nm) wavelength, for applications such as
high speed LAN or broadcasting up to 10Gbps, our diodes have a high sensitivity (0.95 A/W). Hamamatsu also provides high performance products for Optical Communications with sophisticated functions like our
InGaAs linear image sensors incorporating our CMOS ICs, as well as Photo ICs that incorporate a Si PIN photodiode and high-speed signal processor on a single chip for use in factory / office automation and home or automotive networking.
Hamamatsu specializes in the production of optoelectronic devices, which can incorporate a lens or flat window in the device package.
The newly revised and updated Opto-semiconductor Handbook is out! Available here.