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Part Number	Abstract
S11510-1106	Enhanced near infrared sensitivity: QE=40% (λ = 1000 nm), back-thinned FFT-CCD

FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. With a MEMS structure on the back side of the CCD, the S11500-1007 has much higher sensitivity than our conventional product (S7030-1007.) The S11500-1007 is also suitable for detectors in Raman spectroscopy. Binning operation ensures even higher S/N and signal processing speed compared to methods that use external circuit to add signals digitally. The S11500-1007 is pin compatible with the S7030-1007 and operates under the same drive conditions.

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Key Specifications	Drawing
Single piece price Contact us for quantity discounts. $938.00 Part Number S11510-1106 Active Length 0.896mm ActiveHeight 28.672 mm ActivePixels(H) 2048 ActivePixels(V) 64 Min 200nm Max 1100nm Full Well Capacity (V) 60 (V) 300 (H) ke- Max ID 200 e-/pixel/s.25oC ReadoutNoise 6e-rms Application The S11510 Series is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm.	Click image to enlarge Typical Spectral Response Click image to enlarge