Hamamatsu manufactures various types of infrared detectors made from InSb, InAs, and InAsSb semiconductors. Different materials and types of detector (photodiode, photovoltaic or photoconductive) offer different spectral sensitivity within 1 µm and 6.5 µm. 

 

InAs and InSb photovoltaic detectors are sensitive up to 3.6 µm and 5.5 µm, respectively. These detectors cover a spectral response range equivalent to PbSe and PbS photoconductive detectors. InSb and InAs photovoltaic detectors, however, offer a higher response speed and better-signal-to-noise ratio and can be used in applications where PbSe and PbS detectors are not suitable. InSb photoconductive detectors are sensitive up to around 6.5 µm, beyond the range of PbS and PbSe, and they have high sensitivity and high speed. InAsSb photodiodes offer high speed and high sensitivity from 1.5 µm to 5 µm, making them particularly useful in gas analysis and other applications.

 

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